| Record ID | marc_columbia/Columbia-extract-20221130-006.mrc:62818520:3129 |
| Source | marc_columbia |
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LEADER: 03129mam a22003854a 4500
001 2552268
005 20221012193016.0
008 990430t20002000nyua b 001 0 eng
010 $a 99029979
015 $aGB99-V3796
020 $a0471240672 (alk. paper)
035 $a(OCoLC)ocm41315491
035 $9AQN7367CU
035 $a2552268
040 $aDLC$cDLC$dUKM$dC#P$dOrLoB-B
042 $apcc
050 00 $aTK7874.76$b.U47 2000
082 00 $a621.39/5$221
245 00 $aULSI devices /$cedited by C.Y. Chang, S.M. Sze.
260 $aNew York :$bWiley,$c[2000], ©2000.
300 $axii, 729 pages :$billustrations ;$c25 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references and index.
505 00 $g1.$tIntroduction /$rC. Y. Chang and S. M. Sze --$gPt. I.$tDevice Fundamentals.$g2.$tBipolar Transistor Fundamentals /$rE. Kasper.$g3.$tMOSFET Fundamentals /$rP. Wong.$g4.$tDevice Miniaturization and Simulation /$rS. Banerjee and B. Streetman --$gPt. II.$tDevice Building Blocks and Advanced Device Structures.$g5.$tSOI and Three-Dimensional Structures /$rJ. P. Colinge.$g6.$tThe Hot-Carrier Effect /$rB. Doyle.$g7.$tDRAM and SRAM /$rS. Shichijo.$g8.$tNonvolatile Memory /$rJ. Caywood and G. Derbenwich --$gPt. III.$tCircuit Building Blocks and System-in-Chip Concept.$g9.$tCMOS Digital and Analog Building Block Circuits for Mixed-Signal Applications /$rD. Pehlke and M.-C. F. Chang.$g10.$tHigh-Speed or Low-Voltage, Low-Power Operations /$rI. C. Chen and W. Liu.$g11.$tSystem-on-Chip Concepts /$rM. Pelgrom --$gApp. B.$tInternational System of Units (SI Units) --$gApp. C.$tUnit Prefixes --$gApp. D.$tGreek Alphabet --$gApp. E.$tPhysical Constants --$gApp. F.$tProperties of Si at 300 K.
520 1 $a"Ultra-Large-Scale Integration (ULSI), the next generation of semiconductor devices, has become a hot topic of investigation. ULSI Devices provides electrical and electronic engineers, applied physicists, and anyone involved in IC design and process development with a much-needed overview of key technology trends in this area.
520 8 $aEdited by two of the foremost authorities on semiconductor device physics with contributions by some of the best-known researchers in the field, this comprehensive reference examines such major ULSI devices a MOSFET, nonvolatile semiconductor memory (NVSM), and the bipolar transistor, and the improvements these devices offer in power consumption, low-voltage and high-speed operation, and system-on-chip for ULSI applications."--BOOK JACKET.
650 0 $aIntegrated circuits$xUltra large scale integration.$0http://id.loc.gov/authorities/subjects/sh94000436
650 0 $aSemiconductors.$0http://id.loc.gov/authorities/subjects/sh85119903
650 4 $aSemiconductors.
650 4 $aIntegrated circuits$xUltra large scale integration.
700 1 $aChang, C. Y.,$d1937-$0http://id.loc.gov/authorities/names/n92062490
700 1 $aSze, S. M.,$d1936-$0http://id.loc.gov/authorities/names/n81010934
852 00 $boff,eng$hTK7874.76$i.U47 2000